Electron accumulation at undoped AlSb-InAs quantum wells : theory
Identifieur interne : 020387 ( Main/Repository ); précédent : 020386; suivant : 020388Electron accumulation at undoped AlSb-InAs quantum wells : theory
Auteurs : RBID : Pascal:93-0547264Descripteurs français
- Pascal (Inist)
- Concentration porteur charge, Puits quantique, Courbure bande, Niveau défaut, Centre donneur, Impureté, Niveau profond, Température, Centre accepteur, Compensation, Défaut antisite, Photoconductivité négative, Semiconducteur, Composé minéral, Etude théorique, Energie liaison, Indium Arséniure, Aluminium Antimoniure, Densité defaut.
- Wicri :
- concept : Composé minéral.
English descriptors
- KwdEn :
- Acceptor center, Aluminium Antimonides, Antisite defect, Band bending, Binding energy, Charge carrier concentration, Compensation, Deep level, Defect density, Defect level, Donor center, Impurity, Indium Arsenides, Inorganic compound, Negative photoconductivity, Quantum well, Semiconductor materials, Temperature, Theoretical study.
Abstract
The problem of the origin of electron accumulation at undoped AlSb-InAs quantum wells is examined. The magnitude and temperature dependence of the two-dimensional electron density in an InAs well on the binding energy and concentration of donorlike defects in AlSb is derived in closed form. The excellent agreement between the predicted and experimental temperature data makes it possible to extract the density, binding energy, and identity of the donorlike defects in AlSb. A microscopic explanation for the negative-persistent-photoconductivity effect exhibited by this quantum-well system is proposed
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 020206
Links to Exploration step
Pascal:93-0547264Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electron accumulation at undoped AlSb-InAs quantum wells : theory</title><author><name sortKey="Chadi, D J" uniqKey="Chadi D">D. J. Chadi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>NEC res. inst.</s1><s2>Princeton NJ 08540-6620</s2><s3>USA</s3></inist:fA14><country>États-Unis</country><placeName><region type="state">Nebraska</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">93-0547264</idno><date when="1993">1993</date><idno type="stanalyst">PASCAL 93-0547264 INIST</idno><idno type="RBID">Pascal:93-0547264</idno><idno type="wicri:Area/Main/Corpus">020206</idno><idno type="wicri:Area/Main/Repository">020387</idno></publicationStmt><seriesStmt><idno type="ISSN">0163-1829</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter</title><title level="j" type="main">Physical review. B, Condensed matter</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Acceptor center</term><term>Aluminium Antimonides</term><term>Antisite defect</term><term>Band bending</term><term>Binding energy</term><term>Charge carrier concentration</term><term>Compensation</term><term>Deep level</term><term>Defect density</term><term>Defect level</term><term>Donor center</term><term>Impurity</term><term>Indium Arsenides</term><term>Inorganic compound</term><term>Negative photoconductivity</term><term>Quantum well</term><term>Semiconductor materials</term><term>Temperature</term><term>Theoretical study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Concentration porteur charge</term><term>Puits quantique</term><term>Courbure bande</term><term>Niveau défaut</term><term>Centre donneur</term><term>Impureté</term><term>Niveau profond</term><term>Température</term><term>Centre accepteur</term><term>Compensation</term><term>Défaut antisite</term><term>Photoconductivité négative</term><term>Semiconducteur</term><term>Composé minéral</term><term>Etude théorique</term><term>Energie liaison</term><term>Indium Arséniure</term><term>Aluminium Antimoniure</term><term>Densité defaut</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The problem of the origin of electron accumulation at undoped AlSb-InAs quantum wells is examined. The magnitude and temperature dependence of the two-dimensional electron density in an InAs well on the binding energy and concentration of donorlike defects in AlSb is derived in closed form. The excellent agreement between the predicted and experimental temperature data makes it possible to extract the density, binding energy, and identity of the donorlike defects in AlSb. A microscopic explanation for the negative-persistent-photoconductivity effect exhibited by this quantum-well system is proposed</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0163-1829</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter</s0></fA03><fA05><s2>47</s2></fA05><fA06><s2>20</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Electron accumulation at undoped AlSb-InAs quantum wells : theory</s1></fA08><fA11 i1="01" i2="1"><s1>CHADI (D. J.)</s1></fA11><fA14 i1="01"><s1>NEC res. inst.</s1><s2>Princeton NJ 08540-6620</s2><s3>USA</s3></fA14><fA20><s1>13478-13484</s1></fA20><fA21><s1>1993</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2><s5>354000034043740460</s5></fA43><fA44><s0>0000</s0></fA44><fA45><s0>15 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>93-0547264</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i2="1"><s0>Physical review. B, Condensed matter</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The problem of the origin of electron accumulation at undoped AlSb-InAs quantum wells is examined. The magnitude and temperature dependence of the two-dimensional electron density in an InAs well on the binding energy and concentration of donorlike defects in AlSb is derived in closed form. The excellent agreement between the predicted and experimental temperature data makes it possible to extract the density, binding energy, and identity of the donorlike defects in AlSb. A microscopic explanation for the negative-persistent-photoconductivity effect exhibited by this quantum-well system is proposed</s0></fC01><fC02 i1="01" i2="X"><s0>001B11C04</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Concentration porteur charge</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Charge carrier concentration</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Concentración portador carga</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Puits quantique</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Quantum well</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Pozo cuántico</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Courbure bande</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Band bending</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Curvatura banda</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Niveau défaut</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Defect level</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Centre donneur</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Donor center</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Centro dador</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Impureté</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Impurity</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="GER"><s0>Begleitelement</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Impureza</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Niveau profond</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Deep level</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Nivel profundo</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Température</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Temperature</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="GER"><s0>Temperatur</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Temperatura</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Centre accepteur</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Acceptor center</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Centro aceptor</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Compensation</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Compensation</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Compensación</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Défaut antisite</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Antisite defect</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Defecto antisitio</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Photoconductivité négative</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Negative photoconductivity</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Fotoconductividad negativa</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Semiconducteur</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Semiconductor materials</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="GER"><s0>Halbleiter</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Semiconductor(material)</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Composé minéral</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Inorganic compound</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Compuesto inorgánico</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Etude théorique</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Theoretical study</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="GER"><s0>Theoretische Untersuchung</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Estudio teórico</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Energie liaison</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Binding energy</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="GER"><s0>Bindungsenergie</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Energía enlace</s0><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Indium Arséniure</s0><s2>NC</s2><s2>NA</s2><s5>81</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Indium Arsenides</s0><s2>NC</s2><s2>NA</s2><s5>81</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Indio Arseniuro</s0><s2>NC</s2><s2>NA</s2><s5>81</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Aluminium Antimoniure</s0><s2>NC</s2><s2>FR</s2><s2>FX</s2><s2>NA</s2><s5>82</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Aluminium Antimonides</s0><s2>NC</s2><s2>FR</s2><s2>FX</s2><s2>NA</s2><s5>82</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Aluminio Antimoniuro</s0><s2>NC</s2><s2>FR</s2><s2>FX</s2><s2>NA</s2><s5>82</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Densité defaut</s0><s4>CD</s4><s5>95</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Defect density</s0><s4>CD</s4><s5>95</s5></fC03><fN21><s1>252</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 020387 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 020387 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:93-0547264
|texte= Electron accumulation at undoped AlSb-InAs quantum wells : theory
}}
| This area was generated with Dilib version V0.5.77. |  |